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NVTFS4C06NTWG I-Tech Specifications

MOSFET NFET U8FL 30V 71A 4.2MOHM

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 37W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 21A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Reach Compliance Code not_compliant
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 21A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 367A
Avalanche Energy Rating (Eas) 34 mJ
Lead Free Lead Free
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