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NVTFS4823NTAG I-Tech Specifications

NVTFS4823NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 23 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 3.1W Ta 21W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 30A
Drain to Source Breakdown Voltage 30V
Length 3.15mm
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 21W
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 10.5m Ω @ 15A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 13A Ta
Rise Time 22ns
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Height 750μm
Width 3.15mm
RoHS Status ROHS3 Compliant
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