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SIRA18ADP-T1-GE3 I-Tech Specifications

MOSFET N-CH 30V 30.6A POWERPAKSO

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 8.7 mOhm @ 10A, 10V
Packaging Cut Tape (CT)
Other Names SIRA18ADP-T1-GE3CT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30.6A (Tc)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +20V, -16V
Supplier Device Package PowerPAK® SO-8
Power Dissipation (Max) 14.7W (Tc)
Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 30.6A (Tc) 14.7W (Tc) Surface Mount PowerPAK® SO-8
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SIRA18ADP-T1-GE3 abakhiqizi bomkhiqizo: Electro-Films (EFI) / Vishay, Bonchip isitoko, SIRA18ADP-T1-GE3 intengo yereferensi. SIRA18ADP-T1-GE3 imingcele, SIRA18ADP-T1-GE3 I-Datasheet PDF kanye nephinikhodi yencazelo yomdwebo wokulanda.Ungasebenzisa i SIRA18ADP-T1-GE3 Izixhumi ezixhumekayo, i-DSP Datesheet PDF, thola SIRA18ADP-T1-GE3 umdwebo wephini kanye nomdwebo wesifunda kanye nendlela yokusebenzisa umsebenzi, SIRA18ADP-T1-GE3 electronics tutorials.Ungalanda kusukela ku Bonchip.
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