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SIRA10DP-T1-GE3 I-Tech Specifications

MOSFET N-CH 30V 60A PPAK SO-8

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 5W (Ta), 40W (Tc)
Package / Case PowerPAK® SO-8
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +20V, -16V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 10A, 10V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
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SIRA10DP-T1-GE3 abakhiqizi bomkhiqizo: Vishay / Siliconix, Bonchip isitoko, SIRA10DP-T1-GE3 intengo yereferensi. SIRA10DP-T1-GE3 imingcele, SIRA10DP-T1-GE3 I-Datasheet PDF kanye nephinikhodi yencazelo yomdwebo wokulanda.Ungasebenzisa i SIRA10DP-T1-GE3 Izixhumi ezixhumekayo, i-DSP Datesheet PDF, thola SIRA10DP-T1-GE3 umdwebo wephini kanye nomdwebo wesifunda kanye nendlela yokusebenzisa umsebenzi, SIRA10DP-T1-GE3 electronics tutorials.Ungalanda kusukela ku Bonchip.
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