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SI7110DN-T1-E3 I-Tech Specifications

MOSFET N-CH 20V 13.5A 1212-8

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case PowerPAK® 1212-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 5.3 mOhm @ 21.1A, 10V
Packaging Cut Tape (CT)
Other Names SI7110DN-T1-E3CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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