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SI4511DY-T1-E3 I-Tech Specifications

MOSFET N/P-CH 20V 7.2A 8-SOIC

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.8V @ 250µA
Series TrenchFET®
Power - Max 1.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 9.6A, 10V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
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SI4511DY-T1-E3 abakhiqizi bomkhiqizo: Vishay / Siliconix, Bonchip isitoko, SI4511DY-T1-E3 intengo yereferensi. SI4511DY-T1-E3 imingcele, SI4511DY-T1-E3 I-Datasheet PDF kanye nephinikhodi yencazelo yomdwebo wokulanda.Ungasebenzisa i SI4511DY-T1-E3 Izixhumi ezixhumekayo, i-DSP Datesheet PDF, thola SI4511DY-T1-E3 umdwebo wephini kanye nomdwebo wesifunda kanye nendlela yokusebenzisa umsebenzi, SI4511DY-T1-E3 electronics tutorials.Ungalanda kusukela ku Bonchip.
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