RN2605(TE85L,F) I-Tech Specifications

TRANS 2PNP PREBIAS 0.3W SM6

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 PNP - Pre-Biased (Dual)
Resistor - Emitter Base (R2) (Ohms) 47k
Power - Max 300mW
Package / Case SC-74, SOT-457
Frequency - Transition 200MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package SM6
Resistor - Base (R1) (Ohms) 2.2k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
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Ezinye zihlanganisa   "RN260"   izingxenye

Izingxenye ezilandelayo zihlanganisa  'RN260' 

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