SBAS116LT1G I-Tech Specifications

SBAS116LT1G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Isilungisi Sombane Esinezigaba Ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
HTS Code 8541.10.00.70
Max Power Dissipation 300mW
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 5nA @ 75V
Forward Current 200mA
Operating Temperature - Junction -55°C~150°C
Output Current-Max 0.2A
Current - Average Rectified (Io) 200mA DC
Average Rectified Current 200mA
Peak Reverse Current 5nA
Capacitance @ Vr, F 2pF @ 0V 1MHz
Recovery Time 3 μs
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory Rectifier Diodes
Terminal Position DUAL
Base Part Number BAS116
Reference Standard AEC-Q101
Element Configuration Single
Diode Type Standard
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Max Reverse Leakage Current 80nA
Max Surge Current 500mA
Halogen Free Halogen Free
Max Reverse Voltage (DC) 75V
Reverse Recovery Time 3 μs
Max Repetitive Reverse Voltage (Vrrm) 75V
Max Forward Surge Current (Ifsm) 500mA
Height 1.01mm
Width 1.4mm
RoHS Status ROHS3 Compliant
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