NVD4806NT4G I-Tech Specifications

Trans MOSFET N-CH 30V 15.6A 3-Pin(2+Tab) DPAK T/R

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Pin Count 4
Element Configuration Single
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2142pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Continuous Drain Current (ID) 79A
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1.4W Ta 68W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11.3A Ta 79A Tc
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Lead Free Lead Free
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