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NVD2955T4G I-Tech Specifications

NVD2955T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Resistance 180mOhm
Subcategory Other Transistors
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 55W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12A Ta
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage -60V
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 3 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 55W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 20V
RoHS Status ROHS3 Compliant
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