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NTTFS4929NTAG I-Tech Specifications

MOSFET N-CH 30V 34A 8WDFN

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 810mW Ta 22.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.6A Ta 34A Tc
Rise Time 24ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 34A
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 2.11W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 6.1 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 69A
RoHS Status ROHS3 Compliant
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