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NTR3A30PZT1G I-Tech Specifications

NTR3A30PZT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Pin Count 3
Power Dissipation-Max 480mW Ta
Power Dissipation 480mW
FET Type P-Channel
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1651pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Turn-Off Delay Time 1.043 μs
Threshold Voltage -650mV
Drain Current-Max (Abs) (ID) 3A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 1.437803g
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Channels 1
Element Configuration Single
Turn On Delay Time 100 ns
Rds On (Max) @ Id, Vgs 38m Ω @ 3A, 4.5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 3A Ta
Rise Time 208ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 552 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
REACH SVHC No SVHC
Lead Free Lead Free
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