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NTMC1300R2 I-Tech Specifications

MOSFET N/P-CH 30V 8SOIC

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Ama-Transistors Ama-Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -65°C~150°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 30V
Terminal Position DUAL
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 2.2A
Pulsed Drain Current-Max (IDM) 8.5A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 3A
JESD-30 Code R-PDSO-G8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.2A 1.8A
Rise Time 11ns
Continuous Drain Current (ID) 1.8A
Drain-source On Resistance-Max 0.09Ohm
Avalanche Energy Rating (Eas) 75 mJ
FET Feature Logic Level Gate
Lead Free Contains Lead
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