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NTHD3100CT1G I-Tech Specifications

NTHD3100CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Ama-Transistors Ama-Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.1W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Element Configuration Dual
Power Dissipation 1.1W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 16 ns
Threshold Voltage -1.5V
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Length 3.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 7 hours ago)
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Terminal Form C BEND
Current Rating 2.9A
Base Part Number NTHD3100C
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Rise Time 11.7ns
Fall Time (Typ) 11.7 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.05mm
Width 1.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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