NSS1C200LT1G I-Tech Specifications

NSS1C200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 710mW
Terminal Form GULL WING
Base Part Number NSS1C200
Number of Elements 1
Power Dissipation 710mW
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Transistor Type PNP
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage -40mV
Collector Base Voltage (VCBO) 140V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 120MHz
Pin Count 3
Element Configuration Single
Power - Max 490mW
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A
Transition Frequency 120MHz
Max Breakdown Voltage 100V
Emitter Base Voltage (VEBO) 7V
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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