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NGB18N40CLBT4G I-Tech Specifications

NGB18N40CLBT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 115W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 115W
Input Type Logic
Rise Time 4.5ns
Collector Emitter Voltage (VCEO) 430V
Collector Emitter Breakdown Voltage 430V
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Thr Voltage-Max 1.9V
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 400V
Terminal Form GULL WING
Current Rating 18A
Base Part Number NG*18N40CL
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Max Collector Current 18A
Turn On Time 5200 ns
Turn Off Time-Nom (toff) 13000 ns
Gate-Emitter Voltage-Max 18V
Fall Time-Max (tf) 15000ns
RoHS Status RoHS Compliant
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