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NDF08N60ZH I-Tech Specifications

MOSFET N-CH 600V 8.4A TO-220FP

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 8.4A Tc
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 8.4A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 600V
Length 10.3mm
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Pin Count 3
Power Dissipation-Max 36W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 950m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Turn-Off Delay Time 36 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.95Ohm
Height 15.3mm
Width 4.7mm
RoHS Status RoHS Compliant
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