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MPSA55G I-Tech Specifications

MPSA55G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC -60V
Terminal Position BOTTOM
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 60V
hFE Min 100
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
Base Part Number MPSA55
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 50MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 4V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
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