FGH40N120ANTU I-Tech Specifications

FGH40N120ANTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

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Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Max Power Dissipation 417W
Input Type Standard
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Test Condition 600V, 40A, 5 Ω, 15V
IGBT Type NPT
Current - Collector Pulsed (Icm) 160A
Switching Energy 2.3mJ (on), 1.1mJ (off)
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.6mm
Width 4.7mm
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory Insulated Gate BIP Transistors
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Max Collector Current 64A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Gate Charge 220nC
Td (on/off) @ 25°C 15ns/110ns
Gate-Emitter Voltage-Max 25V
Fall Time-Max (tf) 80ns
Length 15.6mm
Radiation Hardening No
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FGH40N60SFDTU ON Semiconductor Ama-IGBT angashadile

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