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FGA40N65SMD I-Tech Specifications

FGA40N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 92 ns
Max Collector Current 80A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 40A, 6 Ω, 15V
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 820μJ (on), 260μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 20.1mm
Width 5mm
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 349W
Rise Time-Max 28ns
Power Dissipation 349W
Turn On Delay Time 12 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 42 ns
Collector Emitter Saturation Voltage 2.5V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Gate Charge 119nC
Td (on/off) @ 25°C 12ns/92ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 17ns
Length 16.2mm
Radiation Hardening No
Lead Free Lead Free
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