FCI25N60N-F102 I-Tech Specifications

MOSFET N-CH 600V 25A I2PAK

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 216W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 25A Tc
Rise Time 22ns
Vgs (Max) ±30V
Turn-Off Delay Time 68 ns
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series SupreMOS™
Part Status Active
Subcategory FET General Purpose Power
Power Dissipation-Max 216W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 21 ns
Rds On (Max) @ Id, Vgs 125m Ω @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3352pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 25A
Drain to Source Breakdown Voltage 600V
REACH SVHC No SVHC
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