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EMX1DXV6T1G I-Tech Specifications

TRANS 2NPN 50V 0.1A SOT563

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-array Ama-BJT Ama-Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
Pin Count 6
Polarity NPN
Power Dissipation 500mW
Gain Bandwidth Product 180MHz
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 180MHz
Collector Base Voltage (VCBO) 60V
hFE Min 120
Length 1.7mm
Radiation Hardening No
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 2
Element Configuration Dual
Transistor Application AMPLIFIER
Transistor Type 2 NPN (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 400mV
Emitter Base Voltage (VEBO) 7V
Height 600μm
Width 1.3mm
RoHS Status ROHS3 Compliant
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