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BD676G I-Tech Specifications

BD676G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -45V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity PNP
Power Dissipation 40W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Transition Frequency 200MHz
Emitter Base Voltage (VEBO) 5V
Height 11.04mm
Width 2.66mm
REACH SVHC No SVHC
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 40W
Current Rating -4A
Base Part Number BD676
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Max Collector Current 4A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
hFE Min 750
Length 7.74mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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