BC517 I-Tech Specifications

BC517 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 30V
Terminal Position BOTTOM
Current Rating 1.2A
Base Part Number BC517
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA 2V
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 200MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
hFE Min 30000
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 200mg
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Polarity NPN
Power Dissipation 625mW
Transistor Type NPN - Darlington
Max Collector Current 1A
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1.2A
REACH SVHC No SVHC
Lead Free Lead Free
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