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2N4123RLRM I-Tech Specifications

2N4123RLRM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

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Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature -55°C~150°C TJ
Published 1996
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 240
Current Rating 200mA
Base Part Number 2N4123
JESD-30 Code O-PBCY-T3
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 40V
hFE Min 50
Lead Free Contains Lead
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Voltage - Rated DC 30V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 300mV
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
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