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SI3460DDV-T1-GE3 I-Tech Specifications

MOSFET N-CH 20V 7.9A 6-TSOP

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 8V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 28 mOhm @ 5.1A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 666pF @ 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 7.9A (Tc)
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SI3460DDV-T1-GE3 abakhiqizi bomkhiqizo: Vishay / Siliconix, Bonchip isitoko, SI3460DDV-T1-GE3 intengo yereferensi. SI3460DDV-T1-GE3 imingcele, SI3460DDV-T1-GE3 I-Datasheet PDF kanye nephinikhodi yencazelo yomdwebo wokulanda.Ungasebenzisa i SI3460DDV-T1-GE3 Izixhumi ezixhumekayo, i-DSP Datesheet PDF, thola SI3460DDV-T1-GE3 umdwebo wephini kanye nomdwebo wesifunda kanye nendlela yokusebenzisa umsebenzi, SI3460DDV-T1-GE3 electronics tutorials.Ungalanda kusukela ku Bonchip.
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