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SI1016CX-T1-GE3 I-Tech Specifications

MOSFET N/P-CH 20V SC89-6

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Series TrenchFET®
Power - Max 220mW
Package / Case SOT-563, SOT-666
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package SC-89-6
Rds On (Max) @ Id, Vgs 396 mOhm @ 500mA, 4.5V
Packaging Tape & Reel (TR)
Other Names SI1016CX-T1-GE3-ND SI1016CX-T1-GE3TR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
FET Feature Logic Level Gate
Detailed Description Mosfet Array N and P-Channel 20V 220mW Surface Mount SC-89-6
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