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IPW60R190E6FKSA1 I-Tech Specifications

MOSFET N-CH 600V 20.2A TO247

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 630µA
Technology MOSFET (Metal Oxide)
Series CoolMOS™
Power Dissipation (Max) 151W (Tc)
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO247-3
Rds On (Max) @ Id, Vgs 190 mOhm @ 9.5A, 10V
Packaging Tube
Other Names IPW60R190E6 IPW60R190E6-ND SP000797384
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
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