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IPB60R125C6ATMA1 I-Tech Specifications

MOSFET N-CH 600V 30A TO263

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 960µA
Technology MOSFET (Metal Oxide)
Series CoolMOS™
Power Dissipation (Max) 219W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2127pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount D²PAK (TO-263AB)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 125 mOhm @ 14.5A, 10V
Packaging Tape & Reel (TR)
Other Names IPB60R125C6 IPB60R125C6-ND IPB60R125C6ATMA1TR IPB60R125C6TR-ND SP000687456
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
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