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IRGS4615DTRRPBF I-Tech Specifications

IGBT 600V 23A 99W D2PAK

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2014
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 260
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Max Collector Current 15A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A
Current - Collector Pulsed (Icm) 24A
Switching Energy 70μJ (on), 145μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 260.39037mg
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 99W
[email protected] Reflow Temperature-Max (s) 30
Input Type Standard
Collector Emitter Voltage (VCEO) 1.85V
Reverse Recovery Time 60 ns
Current - Collector (Ic) (Max) 23A
Test Condition 400V, 8A, 47 Ω, 15V
Gate Charge 19nC
Td (on/off) @ 25°C 30ns/95ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
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