IRFP250NPBF I-Tech Specifications

MOSFET N-CH 200V 30A TO-247AC

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 75mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 200V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 214W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2159pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 200V
Nominal Vgs 4 V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 30A
Number of Elements 1
Element Configuration Single
Power Dissipation 214W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 30A Tc
Rise Time 43ns
Vgs (Max) ±20V
Turn-Off Delay Time 41 ns
JEDEC-95 Code TO-247AC
Drain to Source Breakdown Voltage 200V
Recovery Time 279 ns
Height 20.2946mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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