IRFB4110PBF I-Tech Specifications

IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 370W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 67ns
Vgs (Max) ±20V
Turn-Off Delay Time 78 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 4 V
Length 10.66mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 100V
Current Rating 180A
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 88 ns
Continuous Drain Current (ID) 180A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0045Ohm
Pulsed Drain Current-Max (IDM) 670A
Recovery Time 75 ns
Height 16.51mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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