IRFB23N15DPBF I-Tech Specifications

IRFB23N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2000
Part Status Not For New Designs
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 32ns
Vgs (Max) ±30V
Turn-Off Delay Time 18 ns
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 92A
Avalanche Energy Rating (Eas) 260 mJ
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 90mOhm
Voltage - Rated DC 150V
Current Rating 23A
Power Dissipation-Max 3.8W Ta 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8.4 ns
Continuous Drain Current (ID) 23A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Nominal Vgs 5.5 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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