IRF7329TR I-Tech Specifications

MOSFET 2P-CH 12V 9.2A 8-SOIC

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Ama-Transistors Ama-Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.2A
Drain to Source Voltage (Vdss) 12V
Drain-source On Resistance-Max 0.017Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Drain Current-Max (Abs) (ID) 9.2A
DS Breakdown Voltage-Min 12V
FET Feature Logic Level Gate
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