IRF7313QTRPBF I-Tech Specifications

MOSFET 2N-CH 30V 6.5A 8-SOIC

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Ama-Transistors Ama-Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Published 2010
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 2W
Power Dissipation 2W
Power - Max 2W
Rds On (Max) @ Id, Vgs 29mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 20V
FET Feature Standard
Rds On Max 29 mΩ
Length 4.9784mm
Radiation Hardening No
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number IRF7313QPBF
Turn On Delay Time 8.1 ns
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A
Rise Time 8.9ns
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 6.5A
Input Capacitance 650pF
Drain to Source Resistance 46mOhm
Height 1.4986mm
Width 3.9878mm
RoHS Status RoHS Compliant
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