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IPW50R190CEFKSA1 I-Tech Specifications

Trans MOSFET N-CH 500V 18.5A 3-Pin(3+Tab) TO-247 Tube

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 127W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 510μA
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Rise Time 8.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 54 ns
Gate to Source Voltage (Vgs) 20V
FET Feature Super Junction
RoHS Status RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 127W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 6.2A, 13V
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 13V
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 18.5A
Max Dual Supply Voltage 500V
Radiation Hardening No
Lead Free Lead Free
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