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IPP80N04S2H4AKSA2 I-Tech Specifications

MOSFET N-CH 40V 80A TO220-3

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 80A
Drain-source On Resistance-Max 0.004Ohm
DS Breakdown Voltage-Min 40V
RoHS Status RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Number of Elements 1
Power Dissipation-Max 300W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 660 mJ
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