IPI90R500C3XKSA1 I-Tech Specifications

MOSFET N-CH 900V 11A TO-262

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Part Status Not For New Designs
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 156W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 11A
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 388 mJ
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 740μA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Drain to Source Voltage (Vdss) 900V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.5Ohm
DS Breakdown Voltage-Min 900V
RoHS Status ROHS3 Compliant
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