IPI80N04S403AKSA1 I-Tech Specifications

MOSFET N-CH 40V 80A TO262-3-1

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 53μA
Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 16 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 200 mJ
Lead Free Contains Lead
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 94W Tc
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 3.7m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 12ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 40V
RoHS Status ROHS3 Compliant
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