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IPG20N06S2L50ATMA1 I-Tech Specifications

MOSFET 2N-CH 55V 20A TDSON-8-4

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Ama-Transistors Ama-Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2003
Part Status Active
ECCN Code EAR99
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 51W
Rds On (Max) @ Id, Vgs 50m Ω @ 15A, 10V
Halogen Free Halogen Free
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 60 mJ
FET Feature Logic Level Gate
Lead Free Contains Lead
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 51W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number *PG20N06
JESD-30 Code R-PDSO-F
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 2 ns
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2V @ 19μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Rise Time 3ns
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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