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IPA80R460CEXKSA1 I-Tech Specifications

Trans MOSFET N-CH 800V 5A 3-Pin TO-220FP Tube

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ CE
Part Status Discontinued
Number of Terminations 3
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 680μA
Current - Continuous Drain (Id) @ 25°C 5A Tc
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.46Ohm
Avalanche Energy Rating (Eas) 470 mJ
Lead Free Lead Free
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Published 2015
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 34W Tc
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 460m Ω @ 7.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 10.8A
DS Breakdown Voltage-Min 800V
RoHS Status ROHS3 Compliant
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Ezinye zihlanganisa   "IPA80"   izingxenye

Izingxenye ezilandelayo zihlanganisa  'IPA80' 

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