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IPA60R280P7XKSA1 I-Tech Specifications

Single N-Channel 600V 280 mOhm 18 nC CoolMOS? Power Mosfet - TO-220-3FP

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ P7
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 761pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 38 mJ
Height 20.7mm
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 24W Tc
Power Dissipation 24W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 190μA
Current - Continuous Drain (Id) @ 25°C 12A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 60 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.28Ohm
Pulsed Drain Current-Max (IDM) 36A
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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