IKP20N60TAHKSA1 I-Tech Specifications

IKP20N60TAHKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop®
Part Status Not For New Designs
Number of Terminations 3
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.05V
Reverse Recovery Time 41 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 20A, 12 Ω, 15V
Turn Off Time-Nom (toff) 287 ns
Gate Charge 120nC
Td (on/off) @ 25°C 18ns/199ns
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -40°C~175°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 166W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Case Connection COLLECTOR
Power - Max 166W
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 20A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 60A
Switching Energy 770μJ
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