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BSM50GD120DN2G I-Tech Specifications

BSM50GD120DN2G datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBTs Amamojula
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2012
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
Pin Count 39
Number of Elements 6
Power Dissipation 400W
Transistor Application POWER CONTROL
Input Standard
Max Collector Current 72A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 33nF @ 25V
RoHS Status RoHS Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Number of Pins 21
Operating Temperature 150°C TJ
Part Status Obsolete
Number of Terminations 39
Subcategory Insulated Gate BIP Transistors
Terminal Form THROUGH-HOLE
JESD-30 Code R-XUFM-T39
Configuration Full Bridge
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector (Ic) (Max) 78A
Turn On Time 100 ns
Turn Off Time-Nom (toff) 450 ns
Gate-Emitter Voltage-Max 20V
VCEsat-Max 3.7 V
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