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BCP55H6327XTSA1 I-Tech Specifications

BCP55H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Izinhlayiya ze-BJT ezilodwa
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Number of Terminations 4
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number BCP55
Configuration SINGLE
Case Connection COLLECTOR
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
Length 6.5mm
Radiation Hardening No
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 100MHz
Number of Elements 1
Power Dissipation 2W
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 60V
Height 1.6mm
Width 3.5mm
RoHS Status ROHS3 Compliant
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