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AUIRG4BC30USTRL I-Tech Specifications

IGBT 600V 23A 100W D2PAK

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-IGBT angashadile
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.1V
Collector Emitter Breakdown Voltage 600V
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Gate Charge 50nC
Td (on/off) @ 25°C 17ns/78ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 150ns
RoHS Status ROHS3 Compliant
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation 100W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 23A
Collector Emitter Saturation Voltage 2.52V
Test Condition 480V, 12A, 23 Ω, 15V
Turn Off Time-Nom (toff) 320 ns
Current - Collector Pulsed (Icm) 92A
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
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