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AUIRF2804 I-Tech Specifications

AUIRF2804 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Isibaluli Somkhiqizo Isibaluli senani
Category I-Semiconductors Ehlukene / Ama-MOSFETs Amatransistor
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 120ns
Vgs (Max) ±20V
Turn-Off Delay Time 130 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 12.88mm
Width 4.82mm
REACH SVHC No SVHC
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 130 ns
Continuous Drain Current (ID) 195A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 270A
Avalanche Energy Rating (Eas) 540 mJ
Length 10.66mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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