SQM40P10-40L_GE3 I-Tech Specifications

MOSFET P-CH 100V 40A TO263

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max) 150W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs 40 mOhm @ 17A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 5295pF @ 25V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description P-Channel 100V 40A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak)
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