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SI7888DP-T1-E3 I-Tech Specifications

MOSFET N-CH 30V 9.4A PPAK SO-8

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.8W (Ta)
Package / Case PowerPAK® SO-8
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 12 mOhm @ 12.4A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta)
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