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SI7107DN-T1-GE3 I-Tech Specifications

MOSFET P-CH 20V 9.8A 1212-8

Isibaluli Somkhiqizo Isibaluli senani
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 450µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case PowerPAK® 1212-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Isibaluli Somkhiqizo Isibaluli senani
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 10.8 mOhm @ 15.3A, 4.5V
Packaging Tape & Reel (TR)
Other Names SI7107DN-T1-GE3TR SI7107DNT1GE3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Detailed Description P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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SI7107DN-T1-GE3 abakhiqizi bomkhiqizo: Electro-Films (EFI) / Vishay, Bonchip isitoko, SI7107DN-T1-GE3 intengo yereferensi. SI7107DN-T1-GE3 imingcele, SI7107DN-T1-GE3 I-Datasheet PDF kanye nephinikhodi yencazelo yomdwebo wokulanda.Ungasebenzisa i SI7107DN-T1-GE3 Izixhumi ezixhumekayo, i-DSP Datesheet PDF, thola SI7107DN-T1-GE3 umdwebo wephini kanye nomdwebo wesifunda kanye nendlela yokusebenzisa umsebenzi, SI7107DN-T1-GE3 electronics tutorials.Ungalanda kusukela ku Bonchip.
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